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ڈاکٹر شہزاد احمد بطور مدیر

ڈاکٹرشہزاد احمد بطور مدیر
ڈاکٹر شہزاداحمد اُن چند خوش نصیبوں میں سے ایک ہیں کہ جن کی زندگی کا ایک ایک لمحہ فروغِ نعت کے لیے وقف ہے۔ انھوں نے نعت کے قریب قریب ہر شعبے میں خدمات انجام دی ہیں۔ نعتیہ صحافت میں بھی اُن کا کردار کلیدی حیثیت سے سامنے آیا ہے۔ اُن کی صحافتی زندگی پر نظر ڈالیں تو آغاز میں وہ ’’روحانی ڈائجسٹ‘‘ کراچی میں سب ایڈیٹررہے۔یہ ڈائجسٹ اَسّی کی دہائی سے شایع ہورہاہے۔ اس کے علاوہ وہ ادیب رائے پوری کے ماہ نامہ’’نوائے نعت‘‘کراچی سے بھی منسلک رہے۔ رئیس امروہوی کے رسالے ’’مینٹل ہیلتھ‘‘ کی طباعت اور دیگر انتظامی امور کے نگران بھی رہے۔روزنامہ جنگ، کراچی میں پروف ریڈر کی حیثیت سے تجربہ حاصل کیا۔پھر ماہ نامہ ’’المفکر‘‘کے ساتھ وابستہ رہے ۔ اس کے بارے میںمنظرعارفی لکھتے ہیں:
’’آپ ماہنامہ ’روحانی ڈائجسٹ‘(کراچی)میں سب ایڈیٹر، ماہانہ ’نوائے نعت‘(کراچی)میں سب ایڈیٹر،ماہ نامہ’مینٹل ہیلتھ ‘ (کراچی )میں سب ایڈیٹر، ماہ نامہ ’المفکر‘(کراچی) میں سب ایڈیٹر رہے اور اب ماہ نامہ ’حمد ونعت‘ (کراچی)کے مؤسس اور ایڈیٹر ہیں۔‘‘(۴۳)
انھوں نے جون ۱۹۹۰ء میں خود ماہ نامہ ’’حمد و نعت‘‘ کا اجرا کیا۔ اس کا پہلا شمارہ جولائی ۱۹۹۰ء میں اشاعت سے ہمکنار ہوا۔ یہ ماہ نامہ 23x36=16کے سائز میں انجمن ترقی نعت (ٹرسٹ) پاکستان کے زیر اہتمام شایع ہوا۔اس ماہ نامے کی مجلسِ ادارت کے نام درج ذیل ہیں:
ایڈیٹر
شہزاد احمد
سب ایڈیٹر
فرزانہ یاسمین
مجلس ادارت
مسرور کیفی، پروفیسر حافظ قاری ریاض احمد بدایونی، رشید وارثی ، عتیق احمد غوری ، غوث میاں، محمد شاہین صدیقی، نصراللہ خان نوری، محمد عرفان عرفی
قانونی مشیر
سید خضر عسکری زیدی(ایڈووکیٹ)
ڈاکٹر شہزاد احمد کا یہ ماہ نامہ نعتیہ ادب کے اولین ماہ ناموں میں سے ایک ہے۔ اس سے پہلے ادیب رائے پوری مرحوم جنوری ۱۹۸۴ء میں ’’نوائے نعت‘‘ کا اجرا کر چکے تھے۔...

Political Assassinations in Pakistan with Special Reference to the Mystery of the Murder of Hayat Muhammad Khan Sherpao, 1975

During Zulfiqar Ali Bhutto's term as Prime Minister, the law and order situation deteriorated throughout the country in general, and in the provinces of NorthWest Frontier Province (now Khyber Pakhtunkhwa) and Balochistan in particular. For multiple reasons, the mutual distrust between Zulfiqar Ali Bhutto and the political leaders of the respective provinces never allowed them to overcome their personal and party interests and establish a harmonious working relationship. Accusations of conspiracy, worsening law and order, and political assassinations, were the dilemmas that agitated the whole country. One of the victims of the political assassination was Hayat Muhammad Khan Sherpao, a leading activist of the Pakistan People's Party and former Governor of Khyber Pakhtunkhwa. The incident of his murder commenced the series of legal disputes and cases of treason filed against the opposition leaders in courts and tribunals, which marred the political scenario of the country till the very end of the Bhutto era. The lack of research on political assassinations in Pakistan is a crucial oversight, especially considering the frequency of the phenomenon and its implications. This study attempts to highlight the main theoretical and political implications of assassinations and identifies some promising directions for further research, in the hope that this unique type of political violence will be better understood in the future.

Optical Characterization of Semiconductor Nanostructures

Self assembled semiconductor nanostructures, such as Quantum wells, nanowires and Quantum Dots, offer a variety of novel properties different from the bulk material. The new properties of low dimensional structures make them a potential candidate in optoelectronic industry. Efforts are now being made to reveal the underlying physics and phenomena of quasi one-dimensional and zero dimensional structures. The work presented herein deals with optical characterization of III-V semiconductor nanowires and III-N-V based emitters i.e., quantum wells and quantum dots, in long wavelength range. Spintronic is an emerging field where dilute magnetic semiconductors are used to achieve magnetic properties. Nanowires with magnetic impurity is considered to be a step towards one-dimensional spintronic devices. Au is the most commonly used catalyst for the VLS growth of NWs. But it also introduces the deep acceptor levels. One way to avoid deep acceptor levels and induce a magnetic impurity is the use of Mn as catalyst. In this thesis, gold (Au) and manganese (Mn) catalyzed self-assembled GaAs and InAs nanowires (NWs) were characterized. The samples were fabricated by molecular beam epitaxial (MBE) technique, on various substrates, at various temperature (540 to 620) oC. Scanning electron microscope (SEM) images revealed high density one-dimensional nanostructures with diameters in the range of 20 to 200 nm and lengths of few microns. Mn was found to diffuse into the stem of wires. HRTEM images show the presence of defects (stacking faults) in nanowires. Raman spectroscopy was used for optical characterization of nanowires and thus to determine the quality of these wires. Defects (stacking faults) were analyzed as the violation of Raman selection rules, which resulted in the asymmetrical broadening and the downshift of the LO and TO modes. We also observed some peaks at the low energy side of the TO peak of the GaAs and InAs NWs, irrespective of the catalyst used for the growth of NWs due to the oxide layer that surrounds the NWs. Surface optical phonons (SO) were found to be activated in both GaAs and InAs NWs. Phonon confinement model (PCM) was used to fit the LO phonon peaks, which also takes into account the contribution for asymmetry in the line shape caused by the presence of SO phonons and structural defects. This allowed to determine the correlation lengths in these wires, the average distance between defects and the defect density in these nanowires. Influence of these defects on SO phonon was also investigated. A good agreement between the experimental results and calculated for SO phonon mode by using the model presented by Ruppin and Englman was obtained. Statistical analysis ofthe data showed a distribution pattern of correlation length related to the growth conditions. Both Au and Mn catalyzed nanowires were found to exhibit similar quality, which indicates that Mn can replace Au catalyst resulting in magnetic impurity in the nanowires and giving us the opportunity to avoid the Au activated deep acceptor levels. To obtain the optical communication wavelength of 1.31 and 1.55 μm on GaAs substrates, InGaAs(N)/GaAs quantum wells and InAs(N)/GaAs(N) quantum dot structures were studied using photoluminescence spectroscopy. The samples were grown by MBE with a proper design of the samples by using stepped barriers to improve carrier trapping efficiency. Comparison of the luminescence from InAsN/GaAs and InAsN/GaAsN quantum dots was made with InGaNAs/GaAs quantum wells, grown under the same experimental conditions. Quantum dot emitters were found to exhibit higher thermal stability. The use of GaAsN barriers as opposed to GaAs barriers provided for narrower and more intense quantum-dot luminescence. Efficient room temperature emission of 1.41 μm (0.88 eV) has been obtained.
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