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1 سلطان باہو شخصیت تے فن

سلطان باہوؒ-شخصیت تے فن

                جنہاں شاعراں نے پنجابی شاعری نوں اپنے اظہار دا وسیلہ قرار دتا۔ اوہناں دی ابتدا پاک پتن والے بابا فرید گنج شکر نے کیتی تے پھیر اوہناں دی دسی ہوئی راہ تے بہت سارے چل پئے جہناں وچوں اک ناں سلطان باہو دا وی اے۔

                سلطان باہو دے ابیات ول نظر مارنے آن تے ایہناں دی مٹھی تے من کچھویں زبان دے نال نال ایہناں دی سرمدی کیفیت پڑھن والے نوں اک انوکھی جیہی روحانی کیفیت توں دوچار کردی وکھالی دیندی اے۔ ایس دی وجہ جانن لئی ساہنوں سلطان باہو دی حیاتی اتے اک اجمالی جیہی نظر پانی پوے گی۔

                سلطان باہو شور کوٹ ضلع شورکوٹ جھنگ دے  اک پنڈ ’’اعوان ۱۰۳۹ ہجری مطابق ۱۶۲۸ء نوں پیدا ہوئے تے ۱۱۰۶ ہجری نوں ۶۳ ورہیاں دی عمر وچ وصال فرمایا آپ دے والد حضرت بازید بڑے متقی، عالم تے حافظ قرآن ہون دے نال نال مغل فوج دے چنگے عہدے دار سن۔ آکھیا جاندا اے کہ اوہناں دی بہادری پاروں شاہ جہان نے شورکوٹ ضلع جھنگ دے نیڑے اک پنڈ ’’قہرگان‘‘ وچ کوئی ۵۰ ہزار وگھے زمین...

جنات کی حقیقت (اسلامی تعلیمات کی روشنی میں ایک تحقیقی جائزہ)

Some things we can not drive and achieve ethics from wisdom and philosophical thought.  Just as Jinnah (Jinn). Literary word Jinnah (jinn ) is derive from the Arabic alphabet means to hide or  cancel. Thus as their description suggests that  they are invisible physically. Different views has been recorded and reported that these are not a  created being, just a doubt or (whim) but others believe them a creature not a result of any hidden feeling  sense of thought but here sacred jurisprudence (shari’ah) states that they are created one like humans having proper way of  youth and puberty, having domestic life and science suffered towards death lastly human eye can  not see us bound to fulfill the requirement of shari’ah and observed to keep in different sects and tribes persuasion like us. Human and jinnat as power and authority.  Quran proves courtery which we can not ignore. “ I did not create the jinns and human except to worship me”(51/56). Islamic jurisprudence is the best source to prove to existence of jinns with beliefs and thick proof   as Rab e kareem say, s “ Indeed we created man from dried clay of  black smooth mud and we created the jinn before that from the smokeless flame of fire”.(15: 26/27)

Reliability Assessment of Wide Band Gap Field Effect Transistors

In 1st part of the thesis, an improved temperature dependent analytical model is presented for wide bandgap MESFETs output characteristics. The model involves self-heating effects, which is a common phenomenon in FETs meant to handle a relatively large current and exhibit negative conductance in their output characteristics. A comparative analysis of modeled and observed characteristics exhibited a significant improvement in the modeled data. In 2nd part, an analytical model is presented to assess Miller capacitors of FETs. Based on four distinct regions underneath the Schottky barrier gate of the device, analytical expressions are developed to assess Miller capacitors for both linear, as well as, for saturation regions of operation. It is shown that, relative to earlier reported models, the proposed technique exhibited a significant improvement in assessing the device Miller capacitors. In 3rd part, substrate effects on AC performance of wide bandgap FETs are discussed. A comparative analysis is established, which demonstrated that both Si and SiC substrates are equally good, and there is a nominal change in the AC performance of the device by changing the substrate from Si to SiC. Particle swarm optimization technique is used to achieve optimized intrinsic parameters by involving measured S-parameters. It is established that Si substrate, which is considerably cheaper than SiC, could comfortably be employed to fabricate submicron GaN HEMTs. Finally, 4th part of the thesis presents a nonlinear model to simulate the I −V characteristics of submicron SiC FETs. The region where the Schottky barrier gate loses its control on the channel current, because of the high biased, is successfully modeled for better understanding of the device operation. It is shown that the device performance drastically affected when transconductance to output conductance ratio is less than unity. By attaining accurate compliance between the observed and modeled output characteristics, even for those conditions where the channel is behaving erroneously, device AC parameters are extracted to predict the reliability of the device characteristics under intense operating conditions.
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